E2000 DR - FM Mosfet Amplifier 2kW OUT



MAIN FEATURES
Operating band: 87.5 ÷ 108 MHz
Power amplifier technology: MOSFET
nominal power : 2000 W
Input power: 50 w (typ.)
Output impedance : 50 Ohm
RF input connector N
RF output connector 7/16", 7/8" EIA Flange
Control power: < 70 W
Nominal gain: 16 dB
RF Efficiency: > 65%
Harmonic and spurious attenuation: < -80 dBc
Residual AM: 0.1 % (typ.)
Dimensions(W x H x D): 48.5 x 79 x 31.5 cm
Weight: 55 Kg
Supply voltage: 110V singlephase, 220V/380V single/three phase - 50/60 Hz
Cooling system: forced air-cooling
VSWR threshold protection: 200 w
Power Consumption: 4000 VA (typ.)
Cos ø: >90%

 

ENVIRONMENTAL CONDITIONS
Operating Temperature : -100°C ÷ +45°C
Non-operating conditions temperature : -20°C ÷ +50°C
Operating conditions humidity : 95% @ +40°C
Non-operating conditions humidity : 90% @ +65°C
Operating conditions altitude: < 4600 m. s.l.m.
Carrying altitude: < 15.000 m. s.l.m.

За повече информация:
office@insatelectronics.com
тел. 02/831-30-65
факс 02/931-34-69










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